Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors
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چکیده
منابع مشابه
Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors
in SrTiO3/SmTiO3 Fin-field effect transistors Amit Verma, Kazuki Nomoto, Wan Sik Hwang, Santosh Raghavan, Susanne Stemmer, and Debdeep Jena Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Department of Materials Engineering, Korea Aerospace University, Go...
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We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and t...
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Increases in the gate capacitance of field-effect transistor structures allow the production of lower-power devices that are compatible with higher clock rates, driving the race for developing high-κ dielectrics. However, many-body effects in an electronic system can also enhance capacitance. Onto the electron system that forms at the LaAlO(3)/SrTiO(3) interface, we fabricated top-gate electrod...
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The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology [1] presently in manufacturing involves a sophisticated heavily strained silicon channel and a high-k dielectric/metal gate stack. Although alternative channel materials with a mobility higher than...
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Tatsuro Goda and Yuji Miyahara* Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University 2-3-10 Kanda-Surugadai, Chiyoda, Tokyo 101-0062, Japan *E-mail: [email protected] Phone: +81 3 5280 8095 Fax: +81 3 5280 8095 Abstract This article focuses on recent advances and developments of field effect transistor (FET) devices for detecting DNA recognition events such as ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4948770